2sB1012(k) silicon pnp epitaxial application low frequency power amplifier complementary pair with 2sd1376(k) outline to-126 mod 1. emitter 2. collector 3. base 1 2 3 5 k w (typ) 1 k w (typ) i d 3 2 1 http://
2sB1012(k) 2 absolute maximum ratings (ta = 25?) item symbol rating unit collector to base voltage v cbo ?20 v collector to emitter voltage v ceo ?20 v emitter to base voltage v ebo ? v collector current i c ?.5 a collector peak current i c(peak) ?.0 a collector power dissipation p c * 1 20 w junction temperature tj 150 c storage temperature tstg ?5 to +150 c c to e diode forward current i d * 1 1.5 a note: 1. value at t c = 25 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo ?20 v i c = ?0 ma, r be = emitter to base breakdown voltage v (br)ebo ? v i e = ?0 ma, i c = 0 collector cutoff current i cbo ?00 m av cb = ?20 v, i e = 0 i ceo ?0 m av ce = ?00 v, r be = dc current transfer ratio h fe 2000 30000 v ce = ? v, i c = ? a* 1 collector to emitter saturation v ce(sat)1 ?.5 v i c = ? a, i b = ? ma* 1 voltage v ce(sat)2 ?.0 v i c = ?.5 a, i b = ?.5 ma* 1 base to emitter saturation v be(sat)1 ?.0 v i c = ? a, i b = ? ma* 1 voltage v be(sat)2 ?.5 v i c = ?.5 a, i b = ?.5 ma* 1 c to e diode forward voltage v d 3.0 v i d = 1.5 a* 1 turn on time t on 0.5 m si c = ? a, i b1 = ? b2 = ? ma turn off time t off 2.0 m s note: 1. pulse test
2sB1012(k) 3 0 50 100 150 case temperature t c ( c) collector power dissipation pc (w) maximum collector dissipation curve 10 20 30 ?.003 ?.01 ?.03 ?.1 ?.3 ?.0 ? collector to emitter voltage v ce (v) collector current i c (a) ? ?0 ?0 ?00 ?00 area of safe operation i c (peak) i c (max) ta = 25 c 1 shot pulse dc (t c = 25 c) pw = 10 ms 100 m s 1 ms 1 m s collector to emitter voltage v ce (v) collector current i c (a) 0 1 2 3 4 5 typical output characteristics ? ? ? ? ? t c = 25 c pulse i b = ?.3 ma ?.5 ma ? ma ? ma ? ma ? ma 30 100 300 1,000 3,000 10,000 30,000 collector current i c (a) dc current transfer ratio h fe ?.03 ?.1 ?.3 ?.0 ? dc current transfer ratio vs. collector current v ce = ? v pulse test ta = 75 c 25 c ?5 c
2sB1012(k) 4 ?.01 ?.03 ?.1 ?.3 ?.0 ? ?0 collector current i c (a) ?.03 ?.1 ?.3 ?.0 ? collector to emitter saturation voltage v ce (sat) (v) base to emitter saturation voltage v be (sat) (v) saturation voltage vs. collector current v be (sat) v ce (sat) ta = 25 c pulse test l c /l b = 200 500 200 500 0.01 0.03 0.1 0.3 1.0 3 10 collector current i c (a) switching time t ( m s) ?.03 ?.1 ?.3 ?.0 ? switching time vs. collector current ta = 25 c v cc = ?0 v i c = 500 i b1 = ?00 i b2 t f t on t stg 0.1 0.3 1.0 3 10 30 100 time t thermal resistance q j-c ( c/w) 0.1 0.1 1.0 1.0 10 10 100 (s) 100 (ms) transient thermal resistance 0.1?00 ms 0.1?00 s t c = 25 c
3.1 f +0.15 ?.1 8.0 0.5 2.3 0.3 1.1 3.7 0.7 11.0 0.5 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 2.7 0.4 120 120 120 hitachi code jedec eiaj weight (reference value) to-126 mod 0.67 g unit: mm
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